2N2369
Торги завершены. Лот не продан.
5 сен 2011 06:33
Возможно, продавец снова выставит его на торги позже. Напишите ему.
Цена
20 руб.
Торги завершены(5 сен 2011 06:32)
Описание
Состояние | Новое |
TRANSISTOR, NPN, TO-18
Transistor Polarity NPN
Collector-to-Emitter Breakdown Voltage 15V
Typ Gain Bandwidth ft 500MHz
Power Dissipation Pd 360mW
DC Collector Current 200mA
DC Current Gain hFE 40
Transistor Case Style TO-18
No. of Pins 3
Case Style TO-18
Current Ic @ Vce Sat 10mA
Current Ic Fall Time Measurement 10mA
Current Ic hFE 10mA
Fall Time @ Ic 18ns
Full Power Rating Temperature 25°C
Max Current Ic 0.2A
Max Current Ic Continuous a 0.2A
Max Power Dissipation Ptot 360mW
Max Voltage Vce Sat 0.25V
Min Gain Bandwidth ft 500MHz
Min Hfe 40
No. of Transistors 1
Pin Configuration a
Power Dissipation 360mW
Termination Type Through Hole
Transistor Type Bipolar
Voltage Vcbo 40V
Transistor Polarity NPN
Collector-to-Emitter Breakdown Voltage 15V
Typ Gain Bandwidth ft 500MHz
Power Dissipation Pd 360mW
DC Collector Current 200mA
DC Current Gain hFE 40
Transistor Case Style TO-18
No. of Pins 3
Case Style TO-18
Current Ic @ Vce Sat 10mA
Current Ic Fall Time Measurement 10mA
Current Ic hFE 10mA
Fall Time @ Ic 18ns
Full Power Rating Temperature 25°C
Max Current Ic 0.2A
Max Current Ic Continuous a 0.2A
Max Power Dissipation Ptot 360mW
Max Voltage Vce Sat 0.25V
Min Gain Bandwidth ft 500MHz
Min Hfe 40
No. of Transistors 1
Pin Configuration a
Power Dissipation 360mW
Termination Type Through Hole
Transistor Type Bipolar
Voltage Vcbo 40V
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