fgh60n60smd FGH60N60SMD

Транзистор FGH60N60SMD
Технические характеристики:
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
IC
Collector Current @ TC = 25oC 120 A
Collector Current @ TC = 100oC 60 A
ICM (1) Pulsed Collector Current 180 A
IF
Diode Forward Current @ TC = 25oC 60 A
Diode Forward Current @ TC = 100oC 30 A
IFM (1) Pulsed Diode Maximum Forward Current 180 A
PD
Maximum Power Dissipation @ TC = 25oC 600 W
Maximum Power Dissipation @ TC = 100oC 300 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
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